Katharina Lorenz received her PhD (Dr. Rer. Nat.) in Physics from the University of Bonn, Germany in 2002. In her thesis she studied ion implantation effects in group-III nitrides using radioactive probes. In the following, as post-doc at Instituto Tecnológico e Nuclear, Portugal, she further specialized in experimental techniques in the area of ion beam analysis and ion beam modification of materials with focus on their application to wide band gap semiconductor hetero- and nanostructures. In 2013 she joint Instituto Superior Técnico (IST) with a development grant within the program Investigador FCT and since 2015 she is researcher at the Department of Nuclear Sciences and Engineering (DECN) of IST. She is part of the INESC MN team since 2018 and her current research interests are the doping and defect engineering of wide band gap semiconductors for optical and sensor applications as well as the study of radiation effects in semiconductors for radiation detectors and radiation resistant electronics.