The increasing availability and quality of wide bandgap semiconductor materials, such as group III nitrides, metal oxides, SiC, among others, opens the potential to develop devices with functionalities that go far beyond those of the ubiquitous, silicon-based electronics. Prime example, awarded with the Nobel Prize in physics in 2014, is the blue, GaN-based light emitting diode which is now successfully used for efficient lighting applications. Besides optical applications, the wide bandgap facilitates high power, high frequency and high temperature electronics. Furthermore, the wide panoply of low dimensional structures such as nanowires or 2D semiconductors allows new device designs, for example in sensor applications.
The Wide Bandgap Semiconductors group of INESC-MN was founded in 2018. Research is conducted in close collaboration with the Materials Processing and Characterization Group of IPFN and group members participate in the operation of the Ion Beam Laboratory of the Accelerator and Radiation Technologies Laboratory (LATR) at the Campus Tecnológico e Nuclear of IST.
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