Photodiode and photoconductor sensors with external quantum efficiencies above 0.1 from 200 to 700 nm. Response times as fast as the microsecond range. Thicknesses between 100 nm and 1 micron. Devices from 50 nm to cm lateral dimensions. Normally processed at maximum temperatures of 250ºC, can be prepared at 100ºC. Compatible with post-CMOS processing, and glass and polymeric substrates. Interference and absorption filters have been monolithically integrated with the photosensors.

TRL level: 4-5

Main Features:

Thin film photosensors in the visible and UV range that can be microfabricated in transparent and flexible substrates. Can also be back processed on CMOS and MEMS platforms. Facile monolithic integration of optical filters.

Possible applications:

Integrated photosensors with integrated circuits, MEMS and microfluidics.