Thin films are integral to the functionality of modern electronic devices, including magnetic sensors, photonic systems, and semiconductor components. At INESC MN, we provide a comprehensive suite of thin-film deposition and processing technologies designed to meet the diverse needs of the electronics industry. Our state-of-the-art facilities accommodate wafer sizes up to 200mm diameter and offer versatile options from single-layer films for basic applications or intricate multilayer structures for advanced devices, our facilities are equipped to handle a wide range of research and production needs in sectors like magnetic sensing technologies, photonics and semiconductors. Leveraging both physical and chemical deposition techniques, we deliver tailored solutions for a wide array of magnetic materials, memristors, dielectrics and metallic contacts.

Over 30 Years of Expertise, we offer advice and services in thin-film deposition and processing, for a broad range of materials and customized processing recipes.

1. Deposition and Processing Techniques:

INESC MN specializes in a variety of deposition and processing methods, each optimized to address specific application requirements:

• Physical Vapor Deposition (PVD):

Magnetron Sputtering (DC and RF): DC Sputtering: Ideal for conductive materials, DC sputtering employs a constant direct current to generate plasma. This plasma then ejects atoms from a target material, which subsequently form a thin film on the substrate.

RF Sputtering: Suitable for insulating materials, RF sputtering uses an alternating radio-frequency current to maintain plasma stability and prevent charge accumulation, enabling the deposition of high-quality films of non-conductive materials.

Ion Beam Deposition: Utilizes an ion beam to sputter material from the target, which is then deposited onto the substrate. This method provides precise control over film thickness, crystallographic orientation and composition control.

• Chemical Vapor Deposition (CVD):

CVD Process: Chemical Vapor Deposition involves the chemical reaction of gaseous precursors on a heated substrate, resulting in the formation of thin films. This method excels in depositing conformal coatings over complex geometries and is particularly effective for producing high-purity dielectrics with excellent uniformity and film quality.

Main Features:

• Specialized Deposition for Magnetic Materials: Advanced deposition and processing tools support wafer sizes up to 200mm diameter, tailored specifically for magnetic multilayer thin films.
• Batch processing (up to 25 wafer cassettes)
• Exceptional Wafer Uniformity: Achieves excellent wafer uniformity with a precision of ±1%.
• Magnetic-based Materials: MnIr, MnPt, MnNi, FeMn, MnRh, NiFe, several CoFe and CoFeB alloys, NiFeCr, TbCo, Fe, Co, CoZrNb, MnCrPt, CoPt, Dy, Gd FeB, Ni, NiO, Fe₃O₄, FeTa
• Dielectric and transparent conductive materials: SiN, MgO, MgF2, MgAlO, Al₂O₃, SiO₂, AlN, NiO, CrOx, TiOx, ITO, IZO, AZO and graphene.
• Metals: GeSbTe, TiW(N), Al₅Si_1.0Cu_0.5, W, Ta, Ru, Pt, Al, Au, Ti, V, Cu, Ir, Pd, Zr, Hf, Re, Cr, Mn, Mo, Sn, Ge, Si, Alumel, TiAlV and Cromel
• Semiconductor: Amorphous silicon

Possible applications:

• Spintronic technologies
• Quantum technologies
• Optics and Photonics
• Semiconductor devices
• Biomedical interfaces

2. Plasma-Based Processing:

• Reactive Ion Etching (RIE)

RIE is a plasma-based etching technique primarily used for material removal rather than deposition. It employs chemically reactive plasma to achieve isotropic/ anisotropic etching, enabling the creation of precise, high-aspect-ratio features.

Main Features:

• Wafer sizes up to 200mm diameter
• Batch processing (up to 25 wafer cassettes)
• Exceptional Wafer Uniformity: Achieves excellent wafer uniformity with a precision of ±1%.
• Metal etching: using Fluorine and Bromine- based Plasmas
• Oxide etching: using Fluorine and Chlorine – based Plasmas
• Ion Milling:

Ion Milling uses a focused ion beam to physically sputter away material from the substrate, allowing for precise control over etching depth and surface planarization.

• Oxygen plasma Ashing:

Organic films removal with oxygen-based plasma. With end point detection for accurate control of the etching process.

By integrating deposition techniques like PVD and CVD with advanced processing methods such as RIE and Ion Milling, INESC MN offers a complete workflow for thin-film fabrication, from material deposition to device nano/microfabrication.